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ZnO/a-Si Distributed Bragg Reflectors for Light Trapping in Thin Film Solar Cells from Visible to Infrared Range

机译:用于薄膜光捕获的ZnO / a-si分布布拉格反射器   从可见光到红外范围的太阳能电池

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摘要

Distributed bragg reflectors (DBRs) consisting of ZnO and amorphous silicon(a-Si) were prepared by magnetron sputtering method for selective lighttrapping. The quarter-wavelength ZnO/a-Si DBRs with only 6 periods exhibit apeak reflectance of above 99% and have a full width at half maximum that isgreater than 347 nm in the range of visible to infrared. The 6-pair reversedquarter-wavelength ZnO/a-Si DBRs also have a peak reflectance of 98%.Combination of the two ZnO/a-Si DBRs leads to a broader stopband from 686 nm to1354 nm. Using the ZnO/a-Si DBRs as the rear reflector of a-Si thin film solarcells significantly increases the photocurrent in the spectrum range of 400 nmto 1000 nm, in comparison with that of the cells with Al reflector. Theobtained results suggest that ZnO/a-Si DBRs are promising reflectors of a-Sithin-film solar cells for light trapping.
机译:采用磁控溅射法制备了由ZnO和非晶硅(a-Si)组成的分布式布拉格反射器(DBR),用于选择性光阱。仅具有6个周期的四分之一波长ZnO / a-Si DBR的峰值反射率超过99%,并且在可见光至红外范围内的半峰全宽大于347 nm。 6对反向四分之一波长ZnO / a-Si DBR的峰值反射率也达到98%,两个ZnO / a-Si DBR的组合产生了从686 nm到1354 nm的更宽的阻带。与具有Al反射器的电池相比,将ZnO / a-Si DBR用作a-Si薄膜太阳能电池的后反射器会显着增加400至1000 nm光谱范围内的光电流。所得结果表明,ZnO / a-Si DBRs是a-Sithin薄膜太阳能电池光捕获的有前途的反射器。

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